sot-89-3l 1. base 2. collector 3. emitter transistor (npn) features z low collector-emitter saturation voltage z high breakdown voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 310 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 305 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v i cbo v cb =200v,i e =0 0.25 a v ce =200v,i b =0 0.25 a collector cut-off current i ceo v ce =300v,i b =0 5 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =10v, i c =1ma 60 h fe(2) v ce =10v, i c =10ma 80 250 dc current gain h fe(3) v ce =10v, i c =30ma 75 collector-emitter saturation voltage v ce(sat) i c =20ma,i b =2ma 0.2 v base-emitter saturation voltage v be(sat) i c =20ma,i b =2ma 0.9 v transition frequency f t v ce =20v,i c =10ma, f=30mhz 50 mhz classification of h fe 2 rank a b1 b2 c range 80 C 100 100 C 150 150 C 200 200 C 250 marking A42 symbol parameter value unit v cbo collector-base voltage 310 v v ceo collector-emitter voltage 305 v v ebo emitter-base voltage 5 v i c collector current 500 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 A42 1 date:2011/05 www.htsemi.com semiconductor jinyu
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